| PART |
Description |
Maker |
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| MDP1901TH |
Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)
|
MagnaChip Semiconductor...
|
| FDS8672S FAIRCHILDSEMICONDUCTORCORP-FDS8672S |
N-Channel PowerTrench㈢ SyncFET⑩ 30V, 18A, 4.8mヘ
N-Channel PowerTrench? SyncFET?/a> 30V, 18A, 4.8mΩ
|
Fairchild Semiconductor
|
| ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120 |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200V Stealth⑩ Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| Q67040-S4387 Q67040-S4493 IDB18E120 IDP18E120 |
Silicon Power Diodes - 18A EmCon in TO220-2
Silicon Power Diodes - 18A EmCon in TO263
Fast Switching EmCon Diode
|
INFINEON[Infineon Technologies AG]
|
| LV12S28-150 LV12S28-150-S |
Low Voltage DC-DC Converter 10-36 Vdc Input 28Vdc Output at 5.36A Half-Brick Package
|
Wall Industries,Inc.
|
| IRF5YZ48CM IRF5YZ48CM-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| STB36NF03LT4 |
N-CHANNEL 30V - 0.015 OHM - 36A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
